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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2002.02.20 Page No. : 1/4 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features * Complements to PNP Type H2N5401 * High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ................................................................................ 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ....................................................................................... 180 V VCEO Collector to Emitter Voltage .................................................................................... 160 V VEBO Emitter to Base Voltage .............................................................................................. 6 V IC Collector Current ....................................................................................................... 600 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob Min. 180 160 6 80 80 50 100 Typ. 160 Max. 50 50 0.15 0.2 1 1 400 300 6 Unit V V V nA nA V V V V Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 IC=10mA, IB=1.0mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz pF Classification of hFE2 Rank Range H2N5551 A 80-200 N 100-250 C 160-400 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C 25 C 100 75 C o o o Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2002.02.20 Page No. : 2/4 Saturation Voltage & Collector Current 100000 VCE(sat) @ IC=10IB Saturation Voltage (mV) 10000 hFE 1000 75 C 100 125 C o o 10 hFE @ VCE=5V 25 C o 1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 Capacitance & Reverse-Biased Voltage 100 25 C o Saturation Voltage (mV) 75 C 125 C o o Capacitance (pF) VBE(sat) @ IC=10IB 10 Cob 100 0.1 1 10 100 1000 1 0.1 1 10 100 1000 Collector Current-IC (mA) Reverse Biased Voltage (V) Cutoff Frequency & Collector Current 1000 10000 Safe Operating Area Cutoff Frequency (MHz).. . 1000 100 VCE=10V Collector Current-IC (mA) 100 PT=1ms PT=100ms 10 PT=1s 10 1 10 100 1 1 10 100 1000 Collector Current (mA) Forward Biased Voltage-VCE (V) H2N5551 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2002.02.20 Page No. : 3/4 PD-Ta 700 600 Power Dissipation-PD (mW) 500 400 300 200 100 0 0 50 100 o 150 200 Ambient Temperature-Ta ( C) H2N5551 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension A B 1 2 3 Date Code Spec. No. : HE6219 Issued Date : 1992.09.21 Revised Date : 2002.02.20 Page No. : 4/4 2 Marking: H 2N 5551 Rank Control Code 3 C Style: Pin 1.Emitter 2.Base 3.Collector D H I E F G 1 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H2N5551 HSMC Product Specification |
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